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KP980A
KP980A - Silicon LDMOS Power Transistor 7 W, up to 1000 MHz, Enhancement Mode
The silicon LDMOS transistor die is designed for large- signal output and driver stages up to 860 MHz frequency range. This transistor is typically used for construction of terminal cascades of power amplifiers or transmitter applications.
Features:
- Performance at 860 MHz, 28 Vdc
- Power Gain: 11 dB Min
- Output Power: 7 W
- Efficiency: 40 % Min
Absolute Maximum Ratings
| Parameters | Sym | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | VDC |
| Drain Current-Continuous | ID | 1.5 | ADC |
| Gate-Source Voltage | VGS | ±20 | VDC |
| Storage Temperature Range | TSTG | -65 tu +150 | ºC |
| Thermal Resistance, Junction to Case |
RqJC | 10 | ºC/W |
| Total Power Dissipation @TC=25 oC |
PD | 17.5 | W |
Parameters
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (ID=10 mA, VGS=0 V) | V(BR)DSS | 60 | — | — | VDC |
| Gate-Source Leakage Current (VGS=20 V, VDS=0 V) | IGSS | — | — | 1.0 | mADC |
| Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS=0 V) | IDSS | — | — | 2.0 | mADC |
| Gate Threshold Voltage (VDS = 10 V, ID = 20 mA) | VGS(TH) | 1 | — | 5 | VDC |
| Forward Transconductance (VDS = 10 V, ID = 0.3 A) | GFS | 0.3 | — | — | mhos |
| Input Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) | CISS | — | 22 | — | pF |
| Output Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) | COSS | — | 11 | — | pF |
| Reverse Transfer Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) | CRSS | — | 2.2 | — | pF |
| Power Gain (VDS = 28 V, POUT = 5 W, lDQ. = 50 mA, f = 500 MHz) | Gp | 11 | 14 | — | dB |
| Drain Efficiency (VDS = 28 V, POUT = 5 W, lDQ. = 50 mA, f = 500 MHz) | hD | 40 | 50 | — | % |