Home →
Products →
Export Products →
RF Power Bipolar Transistors →
Bipolar Мicrowave Transistors →
KT9151AC
KT9151AC - NPN RF Power Transistor
Designed for operation in linear Class AB push-pull power amplifiers of TV and aircraft radio transmitters.
- Output power = 200 W, f = 225 MHz, VCC= 28 V
- Power gain = 7 dB (min)
Maximum Ratings
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | 55 | V |
| Emitter-Base Voltage | VEBO | 4 | V |
| Collector Current | IC | 33 | A |
| Operating Junction Temperature | Tj | +200 | Case KT-82 oC |
| Storage Temperature Range | Tstg | -65 to +150 | oC |
| Thermal Resistance (junction to case) | RθJC | 0.5 | oC/W |
| Total Power Dissipation, TC=25 ºC | PD | 350 | W |
Functional Tests
| Characteristics | Symbol | Value | Unit | ||
|---|---|---|---|---|---|
| min | typ | max | |||
| Common-Emitter Amplifier Power Gain (Vcc = 28 V, Pout = 200 W @ 1 dB Comp., f = 225 MHz) |
GP | 7 | dB | ||
| Collector Efficiency (Vcc = 28 V, Pout = 200 W, f = 225 MHz) |
ηc | 55 | % | ||