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KT9151AC - NPN RF Power Transistor

KT9151AC - NPN RF Power Transistor

Designed for operation in linear Class AB push-pull power amplifiers of TV and aircraft radio transmitters.

  • Output power = 200 W, f = 225 MHz, VCC= 28 V
  • Power gain = 7 dB (min)
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Maximum Ratings

RatingSymbolValueUnit
Collector-Base Voltage VCBO 55 V
Emitter-Base Voltage VEBO 4 V
Collector Current IC 33 A
Operating Junction Temperature Tj +200 Case KT-82 oC
Storage Temperature Range Tstg -65 to +150 oC
Thermal Resistance (junction to case) RθJC 0.5 oC/W
Total Power Dissipation, TC=25 ºC PD 350 W

Functional Tests

CharacteristicsSymbolValueUnit
mintypmax
Common-Emitter Amplifier Power Gain
(Vcc = 28 V, Pout = 200 W @ 1 dB Comp., f = 225 MHz)
GP 7     dB
Collector Efficiency
(Vcc = 28 V, Pout = 200 W, f = 225 MHz)
ηc 55     %