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MRF175LU
MRF175LU - Silicon MOS N-Channel RF Power Transistor 100 W, up to 400 MHz, Enhancement Mode
Designed primarily for wideband large–signal output and driver from 30–400 MHz.
Features:
- Performance at 400 MHz, 28 Vdc
- Power Gain: 8 dB Min
- Output Power: 100 W
- Efficiency: 55 % Min
Absolute Maximum Ratings
| Parameters | Sym | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 65 | VDC |
| Drain Current-Continuous | ID | 8.0 | ADC |
| Gate-Source Voltage | VGS | ±40 | VDC |
| Storage Temperature Range | TSTG | -65 tu +150 | ºC |
| Thermal Resistance, Junction to Case | RqJC | 0.65 | ºC/W |
| Total Power Dissipation @TC=25 oC | PD | 270 | W |
Parameters
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (ID=5.0 mA, VGS=0 V) | V(BR)DSS | 65 | — | — | VDC |
| Gate-Source Leakage Current (VGS=20 V, VDS=0 V) (1) | IGSS | — | — | 1.0 | mADC |
| Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS=0 V) | IDSS | — | — | 2.5 | mADC |
| Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) | VGS(TH) | 1 | — | 6 | VDC |
| Forward Transconductance (VDS = 10 V, ID = 2.5 A) | GFS | 2 | 3 | — | mhos |
| Input Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) | CISS | — | 180 | — | pF |
| Output Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) | COSS | — | 200 | — | pF |
| Reverse Transfer Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) | CRSS | — | 20 | — | pF |
| Power Gain (VDS = 28 V, POUT = 100W, lDQ. = 100 mA, f = 400 MHz) | Gp | 8 | 10 | — | dB |
| Drain Efficiency (VDS = 28 V, POUT = 100 W, lDQ. = 100 mA, f = 400 MHz) | hD | 55 | 60 | — | % |