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MRF157
MRF157 - Silicon MOS N-Channel Microwave Power Transistor 600 W, up to 80 MHz, Enhancement Mode
The silicon MOS transistor is designed for large-signal output stages to 80 MHz.
Features (at 30 MHz):
- Power Gain: 15 dB Min
- Output Power: 600 W
- Efficiency: 40 % Min
Absolute Maximum Ratings
| Parameters | Sym | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 125 | VDC |
| Drain Current-Continuous | ID | 60 | ADC |
| Gate–Source Voltage | VGS | ±40 | VDC |
| Operation Junction Temperature | Tj | -65 ÷ +200 | ºС |
| Storage Temperature Range | TSTG | -65 ÷ +150 | ºC |
| Thermal Resistance, Junction to Case | RqJC | 0.13 | °C/W |
| Total Power Dissipation | PD | 1350 | W |
Parameters
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (IDS = 100 mA, VGS = 0 V) | V(BR)DSS | 125 | — | — | VDC |
| Gate-Source Leakage Current (VGS=20 V, VDS=0 V) | IGSS | — | — | 5 | mADC |
| Zero Gate Voltage Drain Leakage Current (VDS = 50 V, VGS=0 V) | IDSS | — | — | 20 | mADC |
| Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) | VGS(TH) | 1 | 3 | 5 | VDC |
| Forward Transconductance (VDS = 10 V, ID = 20 A) | GFS | 16 | 24 | — | mhos |
| Input Capacitance (VDS = 50 V, VGS=0 V, f = 1 MHz) | CISS | — | 1800 | — | pF |
| Output Capacitance (VDS = 50 V, VGS=0 V, f = 1 MHz) | COSS | — | 750 | — | pF |
| Reverse Transfer Capacitance (VDS = 50 V, VGS=0 V, f = 1 MHz) | CRSS | — | 75 | — | pF |
| Power Gain (VDS = 50 V, POUT = 600 W, lDQ = 800 mA, f = 30 MHz) | Gp | 15 | 20 | — | dB |
| Drain Efficiency (VDS = 50 V, POUT = 600 W, lDQ = 800 mA, f = 30 MHz) | hD | 40 | 45 | — | % |