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MRF151G
MRF151G - Silicon MOS N-Channel Microwave Power Transistor 300 W, up to 175 MHz, Enhancement Mode
The silicon MOS transistor is designed for broadband commercial application at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
Features:
- Power Gain: 14 dB Min
- Output Power: 300 W
- Efficiency: 50 % Min
Absolute Maximum Ratings
Parameters | Sym | Value | Unit |
---|---|---|---|
Drain-Source Voltage | VDSS | 125 | VDC |
Drain Current-Continuous | ID | 40 | ADC |
Gate-Source Voltage | VGS | ±40 | VDC |
Operation Junction Temperature | Tj | -65 ÷ +200 | ºС |
Storage Temperature Range | TSTG | -65 ÷ +150 | ºC |
Thermal Resistance, Junction to Case | RqJC | 0.35 | °C/W |
Total Power Dissipation | PD | 500 | W |
Parameters
Parameter | Symbol | Min. | Typ. | Max. | Unit |
---|---|---|---|---|---|
Drain-Source Breakdown Voltage (IDS=100 mA, VGS=0 V) | V(BR)DSS | 125 | — | — | VDC |
Gate-Source Leakage Current (VGS=20 V, VDS=0 V) | IGSS | — | — | 1 | mADC |
Zero Gate Voltage Drain Leakage Current (VDS = 50 V, VGS=0 V) | IDSS | — | — | 5 | mADC |
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) | VGS(TH) | 1 | 3 | 5 | VDC |
Forward Transconductance (VDS = 10 V, ID = 5 A) | GFS | 5 | 7 | — | mhos |
Input Capacitance (VDS = 50 V, VGS=0 V, f = 1 MHz) | CISS | — | 350 | — | pF |
Output Capacitance (VDS = 50 V, VGS=0 V, f = 1 MHz) | COSS | — | 220 | — | pF |
Reverse Transfer Capacitance (VDS = 50 V, VGS=0 V, f = 1 MHz) | CRSS | — | 15 | — | pF |
Power Gain (VDS = 50 V, POUT = 300 W, lDQ = 500 mA, f = 175 MHz) | Gp | 14 | 16 | — | dB |
Drain Efficiency (VDS = 50 V, POUT = 300 W, lDQ = 500 mA, f = 175 MHz) |
hD | 50 | 55 | — | % |