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MRF151G - Silicon MOS N-Channel Microwave Power Transistor 300 W, up to 175 MHz, Enhancement Mode

MRF151G - Silicon MOS N-Channel Microwave Power Transistor 300 W, up to 175 MHz, Enhancement Mode

The silicon MOS transistor is designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

Features:

  • Power Gain: 14 dB Min
  • Output Power: 300 W
  • Efficiency: 50 % Min
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Absolute Maximum Ratings

ParametersSymValueUnit
Drain-Source Voltage VDSS 125 VDC
Drain Current-Continuous ID 40 ADC
Gate-Source Voltage VGS ±40 VDC
Operation Junction Temperature Tj -65 ÷ +200 ºС
Storage Temperature Range TSTG -65 ÷ +150 ºC
Thermal Resistance, Junction to Case RqJC 0.35 °C/W
Total Power Dissipation PD 500 W

Parameters

ParameterSymbolMin.Typ.Max.Unit
Drain-Source Breakdown Voltage (IDS=100 mA, VGS=0 V) V(BR)DSS 125 VDC
Gate-Source Leakage Current (VGS=20 V, VDS=0 V) IGSS 1 mADC
Zero Gate Voltage Drain Leakage Current (VDS = 50 V, VGS=0 V) IDSS 5 mADC
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(TH) 1 3 5 VDC
Forward Transconductance (VDS = 10 V, ID = 5 A) GFS 5 7 mhos
Input Capacitance (VDS = 50 V, VGS=0 V, f = 1 MHz) CISS 350 pF
Output Capacitance (VDS = 50 V, VGS=0 V, f = 1 MHz) COSS 220 pF
Reverse Transfer Capacitance (VDS = 50 V, VGS=0 V, f = 1 MHz) CRSS 15 pF
Power Gain (VDS = 50 V, POUT = 300 W, lDQ = 500 mA, f = 175 MHz) Gp 14 16 dB
Drain Efficiency (VDS = 50 V, POUT = 300 W, lDQ = 500 mA,
f = 175 MHz)
hD 50 55 %