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MRF150
MRF150 - Silicon MOS N-Channel RF Power Transistor 150 W, up to 30 MHz, Enhancement Mode
The silicon MOS transistor is designed for professional transmitter applications in the HF frequency range.
Features:
- Guaranteed Performance at 30 MHz, 50 V:
- Power Gain: 17 dB Min
- Output Power: 150 W
- Efficiency: 45 % typ
Absolute Maximum Ratings
| Parameters | Sym | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 125 | VDC |
| Drain Current-Continuous | ID | 16 | ADC |
| Gate-Source Voltage | VGS | ±40 | VDC |
| Storage Temperature Range | TSTG | -65 tu +150 | ºC |
| Thermal Resistance, Junction to Case | RqJC | 0.6 | °C/W |
| Total Power Dissipation @Tc=25°C | PD | 300 | W |
Parameters
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (IDS=100.0 mA, VGS=0 V) | V(BR)DSS | 125 | — | — | VDC |
| Gate-Source Leakage Current (VGS=20 V, VDS=0 V) | IGSS | — | — | 1.0 | uADC |
| Zero Gate Voltage Drain Leakage Current (VDS = 50 V, VGS=0 V) | IDSS | — | — | 5.0 | mADC |
| Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) | VGS(TH) | 1.0 | — | 5.0 | VDC |
| Forward Transconductance (VDS = 10 V, ID = 5.0 A) | GFS | 4.0 | 7.0 | — | mhos |
| Input Capacitance (VDS = 50 V, VGS=0 V, f = 1 MHz) | CISS | — | 400 | — | pF |
| Output Capacitance (VDS = 50 V, VGS=0 V, f = 1 MHz) | COSS | — | 240 | — | pF |
| Reverse Transfer Capacitance (VDS = 50 V, VGS=0 V, f = 1 MHz) | CRSS | — | 40 | — | pF |
| Power Gain (f = 30 MHz VDD = 50 V, POUT = 150 W(PEP), lDQ = 250 mA) | Gp | — | 17 | — | dB |
| Drain Efficiency (f = 30; 30.001 MHz, VDD = 50 V, POUT = 150 W(PEP), lDQ = 250 mA) | hD | 45 | — | % | |
| Intermodulation Distortion (VDD = 50 V, Pout = 150 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 250 mA) | — | -32 | — | dB |