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MRF141G
MRF141G - Silicon MOS N-Channel RF Power Transistor 150 W, up to 30 MHz, Enhancement Mode
The silicon MOS transistor is designed for professional transmitter applications in the HF frequency range.
Guaranteed Performance at 175 MHz, 28 V:
- Power Gain: 12 dB
- Output Power: 150 W
- Efficiency: 45 % Min
Absolute Maximum Ratings
Parameters | Sym | Value | Unit |
---|---|---|---|
Drain-Source Voltage | VDSS | 65 | VDC |
Drain Current-Continuous | ID | 16 | ADC |
Gate-Source Voltage | VGS | ±40 | VDC |
Storage Temperature Range | TSTG | -65 tu +150 | ºC |
Thermal Resistance, Junction to Case | RqJC | 0.35 | ºC/W |
Total Power Dissipation @TC=25 oC | PD | 500 | W |
Parameters
Parameter | Symbol | Min. | Typ. | Max. | Unit |
---|---|---|---|---|---|
Drain-Source Breakdown Voltage (ID=100.0 mA, VGS=0 V) | V(BR)DSS | 65 | — | — | VDC |
Gate-Source Leakage Current (VGS=20 V, VDS=0 V) | IGSS | — | — | 1.0 | mADC |
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS=0 V) | IDSS | — | — | 5.0 | mADC |
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) | VGS(TH) | 1.0 | — | 5.0 | VDC |
Forward Transconductance (VDS = 10 V, ID = 5.0 A) | GFS | 5.0 | 7.0 | — | mhos |
Input Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) | CISS | — | 450 | — | pF |
Output Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) | COSS | — | 320 | — | pF |
Reverse Transfer Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) | CRSS | — | 35 | — | pF |
Power Gain (f = 175 MHz, VDD = 28 V, POUT =300 W, lDQ. = 500 mA) | Gp | 12 | 14 | — | dB |
Drain Efficiency (f = 175 MHz, VDD = 28 V, POUT =300 W, lDQ. = 500 mA) | hD | 45 | 55 | — | % |