Home →
Products →
Export Products →
RF Power MOSFET Transistors →
RF Power to 225 MHz VHF AM-FM →
MRF137
MRF137 - Silicon MOS N-Channel RF Power Transistor 30 W, up to 150 MHz, Enhancement Mode
The silicon MOS transistor is designed for professional transmitter applications in the HF/VHF frequency range.
Features:
- Power Gain: 16 dB Min
- Output Power: 30 W
- Efficiency: 60 % Min
Absolute Maximum Ratings
| Parameters | Sym | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 65 | VDC |
| Drain Current-Continuous | ID | 5 | ADC |
| Gate-Source Voltage | VGS | ±40 | VDC |
| Storage Temperature Range | TSTG | -65 tu +150 | ºC |
| Thermal Resistance, Junction to Case | RqJC | 1.75 | ºC/W |
| Total Power Dissipation @TC=25 oC | PD | 100 | W |
Parameters
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (ID=10.0 mA, VGS=0 V) | V(BR)DSS | 65 | — | — | VDC |
| Gate-Source Leakage Current (VGS=20 V, VDS=0 V) | IGSS | — | — | 1.0 | mADC |
| Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS=0 V) | IDSS | — | — | 4.0 | mADC |
| Gate Threshold Voltage (VDS = 10 V, ID = 25 mA) | VGS(TH) | 1 | — | 6 | VDC |
| Forward Transconductance (VDS = 10 V, ID = 0.5 A) | GFS | 0.5 | 0.75 | — | mhos |
| Input Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) | CISS | — | 48 | — | pF |
| Output Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) | COSS | — | 54 | — | pF |
| Reverse Transfer Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) | CRSS | — | 11 | — | pF |
| Power Gain (VDS = 28 V, POUT = 5 W, lDQ. = 25 mA, f = 150 MHz) | Gp | 13 | 16 | — | dB |
| Drain Efficiency (VDS = 28 V, POUT = 5 W, lDQ. = 25 mA, f = 150 MHz) | hD | 50 | 60 | — | % |