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BLF248
BLF248 - Silicon MOS N-Channel Microwave Power Transistor 300 W, up to 225 MHz, Enhancement Mode
The silicon MOS push pull transistor designed for large signal amplifier applications in the VHF frequency range.
Features:
- Power Gain: 10 dB Min
- Output Power: 300 W
- Efficiency: 55 % Min
Absolute Maximum Ratings
| Parameters | Sym | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 65 | VDC |
| Drain Current-Continuous | ID | 25 | ADC |
| Gate-Source Voltage | VGS | ±20 | VDC |
| Operation Junction Temperature | Tj | -65 ÷ +200 | ºС |
| Storage Temperature Range | TSTG | -65 ÷ +150 | ºC |
| Thermal Resistance, Junction to Case | RqJC | 0.35 | ºC /W |
| Total Power Dissipation | PD | 500 | W |
Parameters
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (IDS=100 mA, VGS=0 V) | V(BR)DSS | 65 | — | — | VDC |
| Gate-Source Leakage Current (VGS=20 V, VDS=0 V) | IGSS | — | — | 1 | mADC |
| Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS=0 V) | IDSS | — | — | 5 | mADC |
| Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) | VGS(TH) | 2 | — | 4.5 | VDC |
| Forward Transconductance (VDS = 10 V, ID = 8 A) | GFS | 5 | 7.5 | — | mhos |
| Input Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) | CISS | — | 500 | — | pF |
| Output Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) | COSS | — | 360 | — | pF |
| Reverse Transfer Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) | CRSS | — | 46 | — | pF |
| Power Gain (VDS = 28 V, POUT = 300 W, lDQ = 2 x 250 mA, f = 225 MHz) | Gp | 10 | 11.5 | — | dB |
| Drain Efficiency (VDS = 28 V, POUT = 300 W, lDQ= 2 x 250 mA, f = 225 MHz) |
hD | 55 | 65 | — | % |