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BLF242
BLF242 - Silicon MOS N-Channel Microwave Power Transistor 5 W, up to 175 MHz, Enhancement Mode
The silicon MOS transistor is designed for professional transmitter applications in the HF/VHF frequency range.
Features:
- Power Gain: 19 dB Min
- Output Power: 5 W
- Efficiency: 50 % Min
Absolute Maximum Ratings
Parameters | Sym | Value | Unit |
---|---|---|---|
Drain-Source Voltage | VDSS | 65 | VDC |
Drain Current-Continuous | ID | 1.5 | ADC |
Gate-Source Voltage | VGS | ±20 | VDC |
Operation Junction Temperature | Tj | -65 ÷ +200 | ºС |
Storage Temperature Range | TSTG | -65 ÷ +150 | ºC |
Thermal Resistance, Junction to Case | RqJC | 7 | ºC/W |
Total Power Dissipation | PD | 25 | W |
Parameters
Parameter | Symbol | Min. | Typ. | Max. | Unit |
---|---|---|---|---|---|
Drain-Source Breakdown Voltage (IDS=10 mA, VGS=0 V) | V(BR)DSS | 65 | — | — | VDC |
Gate-Source Leakage Current (VGS=20 V, VDS=0 V) | IGSS | — | — | 1 | mADC |
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS=0 V) | IDSS | — | — | 2 | mADC |
Gate Threshold Voltage (VDS = 10 V, ID = 50mA) | VGS(TH) | 2 | — | 5 | VDC |
Forward Transconductance (VDS = 10 V, ID = 0.3 A) | GFS | 0.16 | 0.26 | — | mhos |
Input Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) | CISS | — | 16 | — | pF |
Output Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) | COSS | — | 14 | — | pF |
Reverse Transfer Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) | CRSS | — | 1.8 | — | pF |
Power Gain (VDS = 28 V, POUT = 5 W, lDQ. = 50 mA, f = 175 MHz) | Gp | 19 | 20 | — | dB |
Drain Efficiency (VDS = 28 V, POUT = 5 W, lDQ. = 50 mA, f = 175 MHz) | hD | 50 | 60 | — | % |