Home →
Products →
Export Products →
RF Power Bipolar Transistors →
Bipolar Мicrowave Transistors →
SD1490
SD1490 - Silicon NPN Microwave Power Transistor 14 W, in the 470 - 860 MHz Range
The silicon n-p-n transistor is designed for Class A High Linearity Amplifier Applications in TV Band IV&V Transmitters.
Features:
- Power Gain: 8 dB Min
- Output Power: 25 W
- IMD3: -45 dBc Max
Absolute Maximum Ratings
Parameters | Sym | Value | Unit |
---|---|---|---|
Collector–Emitter Voltage | VCEO | 30 | VDC |
Collector–Base Voltage | VCBO | 45 | VDC |
Collector Current | IC | 8 | ADC |
Operation Junction Temperature | Tj | -55 ÷ +200 | ºС |
Storage Temperature Range | TSTG | -55 ÷ +150 | ºC |
Thermal Resistance, Junction to Case | RqJC | 1.15 | °C/W |
Total Power Dissipation, TC = 25ºC | PD | 155 | W |
Parameters
Parameter | Symbol | Min. | Typ. | Max. | Unit |
---|---|---|---|---|---|
Collector–Emitter Breakdown Voltage (IC = 200 mA, VBE =0 V) | V(BR)CEO | 30 | — | — | VDC |
Collector–Base Breakdown Voltage (IC = 50 mA) | V(BR)CBO | 45 | — | — | VDC |
Emitter–Base Breakdown Voltage (IE = 10 mA, IC = 0 A) | V(BR)EBO | 3 | — | — | VDC |
Collector–Base Leakage Current (VCB = 20 V) | ICBO | — | — | 10 | mA |
DC Current Gain (VCE = 5 V, IC = 3 A) | hFE | 10 | — | 100 | |
Output Capacitance (VCB = 28 V, IE = 0 A, f = 1 MHz) | COB | — | 72 | — | pF |
Power Gain (VCE = 26.5 V, IC = 2x1.6 A, f = 860 MHz, POUT = 25 W) | Gp | 8 | — | — | dB |
Two-Tone Third-Order Intermodulation Distortion (VCE = 26.5 V, POUT = 25 W, f = 860 MHz, Vision = -8 dB, Sound = -10 dB, Chroma = -16 dB) |
IMD3 | — | — | -45 | dBc |