Home →
Products →
Export Products →
RF Power Bipolar Transistors →
Bipolar Мicrowave Transistors →
KT9133A
KT9133A - NPN Silicon RF Power Transistor
Designed for operation in ultra - linear Class A low and medium-power amplifiers of TV transmitters (Band I – III).
Features:
- Output power = 30 W (PEP), f = 225 MHz, VCC= 28 V
- Power gain = 7.5 dB (min)
- 3 Tone IMD = -53 dB (max)
Maximum Ratings
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCER | 55 | V |
| Emitter-Base Voltage | VEBO | 4 | V |
| Collector Current | IC | 16 | A |
| Operating Junction Temperature | Tj | +200 | oC |
| Storage Temperature Range | Tstg | -65 to +150 | oC |
| Thermal Resistance (junction to case) | RθJC | 1.0 | Case KT-56 oC/W |
| Total Power Dissipation, TC=25 ºC | PD | 175 | W |
Functional Tests
| Characteristics | Symbol | Value | Unit | ||
|---|---|---|---|---|---|
| min | typ | max | |||
| Common-Emitter Amplifier Power Gain (Vcc = 28 V, Pout = 30 W PEP, f = 225 MHz) |
GP | 7.5 | dB | ||
| Intermodulation Distortion(2) (Vcc = 28 V, Pout = 30 W PEP, f = 225 MHz) |
3 Tone IMD |
-53 | dB | ||