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BLY89C
BLY89C - Silicon Bipolar NPN Microwave Power Transistor 25 W, up to 175 MHz
The silicon bipolar n-p-n transistor is designed for Class C, 28 V High Band Applications up to 175 MHz.
Features (At 175 MHz):
- Output Power: 25 W
- Power Gain: 6 dB Min
- Efficiency: 70% Min
Absolute Maximum Ratings
| Parameters | Sym | Value | Unit |
|---|---|---|---|
| Collector–Emitter Voltage | VCEO | 18 | VDC |
| Collector-Base Voltage | VCBO | 36 | VDC |
| Emitter–Base Voltage | VEBO | 4 | VDC |
| Collector Current | IC | 6 | ADC |
| Operation Junction Temperature | Tj | -65 ÷ +200 | ºС |
| Storage Temperature Range | TSTG | -65 ÷ +150 | ºC |
| Thermal Resistance, Junction to Case | RqJC | 2.4 | °C/W |
| Total Power Dissipation, TC=25 ºC | PD | 73 | W |
Parameters
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Collector–Emitter Breakdown Voltage (IC = 50 mA, VBE =0 V) | V(BR)CEO | 18 | — | — | VDC |
| Collector–Emitter Breakdown Voltage (IC = 25 mA, RBE = 10 Ω) | V(BR)CER | 36 | — | — | VDC |
| Emitter–Base Breakdown Voltage (IE = 10 mA, IC = 0 A) | V(BR)EBO | 4 | — | — | VDC |
| Collector–Base Leakage Current (VCB = 18 V) | ICBO | — | — | 10 | mADC |
| DC Current Gain (VCE = 5 V, IC = 1.25 A) | hFE | 10 | — | 100 | |
| Output Capacitance (VCB = 15 V, IE = 0, f = 1 MHz) | COB | — | — | 130 | pF |
| Power Gain (VCE = 12.5 V, POUT = 25 W, f = 175 MHz) | Gp | 6 | — | — | dB |
| Drain Efficiency (VCE = 12.5 V, POUT = 25 W, f = 175 MHz) | hC | 70 | — | — | % |