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2N5641
2N5641 - Silicon Bipolar NPN Microwave Power Transistor 7 W, up to 175 MHz
The silicon bipolar n-p-n transistor is designed primarily for 12.5 V AM Class C RF amplifiers functional in the aviation band 118-136 MHz and for 28 V FM Class C RF amplifiers utilized in ground station transmitters.
Features (At 175 MHz):
- Output Power: 7 W
- Power Gain: 8.4 dB Min
- Efficiency: 60% Min
Absolute Maximum Ratings
| Parameters | Sym | Value | Unit |
|---|---|---|---|
| Collector–Emitter Voltage | VCEO | 35 | VDC |
| Collector-Base Voltage | VCBO | 65 | VDC |
| Emitter–Base Voltage | VEBO | 4 | VDC |
| Collector Current | IC(max) | 1 | ADC |
| Operation Junction Temperature | Tj | -65 ÷ +200 | ºС |
| Storage Temperature Range | TSTG | -65 ÷ +150 | ºC |
| Thermal Resistance, Junction to Case | RqJC | 11.7 | °C/W |
| Total Power Dissipation, TC=25ºC | PD | 15 | W |
Parameters
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Collector–Emitter Breakdown Voltage (IC = 200 mA, IB = 0 A) | V(BR)CEO | 35 | — | — | VDC |
| Collector–Emitter Breakdown Voltage (IC = 200 mA, VBE =0 V) | V(BR)CER | 65 | — | — | VDC |
| Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0 A) | V(BR)EBO | 4 | — | — | VDC |
| Collector–Base Leakage Current (VCB = 30 V, IE = 0 A) | ICBO | — | — | 1 | mADC |
| DC Current Gain (VCE = 5 V, IC = 100 mA) | hFE | 5 | — | 100 | |
| Output Capacitance (VCB = 30 V, IE = 0 A, f = 1 MHz) | COB | — | — | 15 | pF |
| Power Gain (VCE = 28 V, POUT = 7 W, f = 175 MHz) | Gp | 8.4 | — | — | dB |
| Drain Efficiency (VCE = 28 V, POUT = 7 W, f = 175 MHz) | h | 60 | — | — | % |