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2N5641 - Silicon Bipolar NPN Microwave Power Transistor 7 W, up to 175 MHz

2N5641 - Silicon Bipolar NPN Microwave Power Transistor 7 W, up to 175 MHz

The silicon bipolar n-p-n transistor is designed primarily for 12.5 V AM Class C RF amplifiers functional in the aviation band 118-136 MHz and for 28 V FM Class C RF amplifiers utilized in ground station transmitters.

Features (At 175 MHz):

  • Output Power: 7 W
  • Power Gain: 8.4 dB Min
  • Efficiency: 60% Min
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Absolute Maximum Ratings

ParametersSymValueUnit
Collector–Emitter Voltage VCEO 35 VDC
Collector-Base Voltage VCBO 65 VDC
Emitter–Base Voltage VEBO 4 VDC
Collector Current IC(max) 1 ADC
Operation Junction Temperature Tj -65 ÷ +200 ºС
Storage Temperature Range TSTG -65 ÷ +150 ºC
Thermal Resistance, Junction to Case RqJC 11.7 °C/W
Total Power Dissipation, TC=25ºC PD 15 W

Parameters

ParameterSymbolMin.Typ.Max.Unit
Collector–Emitter Breakdown Voltage (IC = 200 mA, IB = 0 A) V(BR)CEO 35 VDC
Collector–Emitter Breakdown Voltage (IC = 200 mA, VBE =0 V) V(BR)CER 65 VDC
Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0 A) V(BR)EBO 4 VDC
Collector–Base Leakage Current (VCB = 30 V, IE = 0 A) ICBO 1 mADC
DC Current Gain (VCE = 5 V, IC = 100 mA) hFE 5 100  
Output Capacitance (VCB = 30 V, IE = 0 A, f = 1 MHz) COB 15 pF
Power Gain (VCE = 28 V, POUT = 7 W, f = 175 MHz) Gp 8.4 dB
Drain Efficiency  (VCE = 28 V, POUT = 7 W, f = 175 MHz) h 60 %