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2N5177
2N5177 - Silicon Bipolar NPN Microwave Power Transistor 17 W, in the 100 – 500 MHz Frequency Rang
The silicon bipolar n-p-n transistor is designed for power amplifier, frequency multiplier or auto-oscillator applications in industrial equipment.
Features (At 500 MHz):
- Output Power: 17 W
- Power Gain: 3 dB Min
- Efficiency: 45% Min
Absolute Maximum Ratings
Parameters | Sym | Value | Unit |
---|---|---|---|
Collector–Emitter Voltage | VCEO | 35 | VDC |
Collector-Base Voltage | VCBO | 55 | VDC |
Emitter–Base Voltage | VEBO | 3.5 | VDC |
Collector Current | IC | 2 | ADC |
Operation Junction Temperature | Tj | -65 ÷ +200 | ºС |
Storage Temperature Range | TSTG | -65 ÷ +150 | ºC |
Thermal Resistance, Junction to Case | RqJC | 5 | °C/W |
Total Power Dissipation, TC=25ºC | PD | 40 | W |
Parameters
Parameter | Symbol | Min. | Typ. | Max. | Unit |
---|---|---|---|---|---|
Collector–Emitter Breakdown Voltage (IC = 200 mA, IB = 0 A) | V(BR)CEO | 35 | — | — | VDC |
Collector–Emitter Breakdown Voltage (IC = 20 mA, VBE =0 V) | V(BR)CER | 55 | — | — | VDC |
Emitter–Base Breakdown Voltage (IE = 2.5 mA, IC = 0 A) | V(BR)EBO | 3.5 | — | — | VDC |
Collector–Base Leakage Current (VCB = 15 V, IE = 0 A) | ICBO | — | — | 1 | mADC |
DC Current Gain (VCE = 5 V, IC = 0.25 A) | hFE | 10 | — | 100 | |
Output Capacitance (VCB = 15 V, IC = 0 A, f = 1 MHz) | COB | — | — | 20 | pF |
Power Gain (VCE = 28 V, POUT = 17 W, f = 500 MHz) | Gp | 3 | — | — | dB |
Drain Efficiency (VCE = 28 V, POUT = 17 W, f = 500 MHz) | hC | 45 | — | — | % |