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Главная → Продукты → Экспортная продукция → Мощные СВЧ MOSFET транзисторы → СВЧ Транзисторы до 225 MHz VHF AM-FM → BLF248

BLF248 - Silicon MOS N-Channel Microwave Power Transistor 300 W, up to 225 MHz, Enhancement Mode

BLF248 - Silicon MOS N-Channel Microwave Power Transistor 300 W, up to 225 MHz, Enhancement Mode

The silicon MOS push pull transistor designed for large signal amplifier applications in the VHF frequency range.

Features:

  • Power Gain: 10 dB Min
  • Output Power: 300 W
  • Efficiency: 55 % Min
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Absolute Maximum Ratings

ParametersSymValueUnit
Drain-Source Voltage VDSS 65 VDC
Drain Current-Continuous ID 25 ADC
Gate-Source Voltage VGS ±20 VDC
Operation Junction Temperature Tj -65 ÷ +200 ºС
Storage Temperature Range TSTG -65 ÷ +150 ºC
Thermal Resistance, Junction to Case RqJC 0.35 ºC /W
Total Power Dissipation PD 500 W

Parameters

ParameterSymbolMin.Typ.Max.Unit
Drain-Source Breakdown Voltage (IDS=100 mA, VGS=0 V) V(BR)DSS 65 — — VDC
Gate-Source Leakage Current (VGS=20 V, VDS=0 V) IGSS — — 1 mADC
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS=0 V) IDSS — — 5 mADC
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(TH) 2 — 4.5 VDC
Forward Transconductance (VDS = 10 V, ID = 8 A) GFS 5 7.5 — mhos
Input Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) CISS — 500 — pF
Output Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) COSS — 360 — pF
Reverse Transfer Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) CRSS — 46 — pF
Power Gain (VDS = 28 V, POUT = 300 W, lDQ = 2 x 250 mA,  f = 225 MHz) Gp 10 11.5 — dB
Drain Efficiency (VDS = 28 V, POUT = 300 W, lDQ= 2 x 250 mA,
f = 225 MHz)		 hD 55 65 — %