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SD1490 - Silicon NPN Microwave Power Transistor 14 W, in the 470 - 860 MHz Range

SD1490 - Silicon NPN Microwave Power Transistor 14 W, in the 470 - 860 MHz Range

The silicon n-p-n transistor is designed for Class A High Linearity Amplifier Applications in TV Band IV&V Transmitters.

Features:

  • Power Gain: 8 dB Min
  • Output Power: 25 W
  • IMD3: -45 dBc Max
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Absolute Maximum Ratings

ParametersSymValueUnit
Collector–Emitter Voltage VCEO 30 VDC
Collector–Base Voltage VCBO 45 VDC
Collector Current IC 8 ADC
Operation Junction Temperature Tj -55 ÷ +200 ºС
Storage Temperature Range TSTG -55 ÷ +150 ºC
Thermal Resistance, Junction to Case RqJC 1.15 °C/W
Total Power Dissipation, TC = 25ºC PD 155 W

Parameters

ParameterSymbolMin.Typ.Max.Unit
Collector–Emitter Breakdown Voltage (IC = 200 mA, VBE =0 V) V(BR)CEO 30 — — VDC
Collector–Base Breakdown Voltage (IC = 50 mA) V(BR)CBO 45 — — VDC
Emitter–Base Breakdown Voltage (IE = 10 mA, IC = 0 A) V(BR)EBO 3 — — VDC
Collector–Base Leakage Current (VCB = 20 V) ICBO — — 10 mA
DC Current Gain (VCE = 5 V, IC = 3 A) hFE 10 — 100  
Output Capacitance (VCB = 28 V, IE = 0 A, f = 1 MHz) COB — 72 — pF
Power Gain (VCE = 26.5 V, IC = 2x1.6 A, f = 860 MHz, POUT = 25 W) Gp 8 — — dB
Two-Tone Third-Order Intermodulation Distortion
(VCE = 26.5 V, POUT = 25 W, f = 860 MHz, Vision = -8 dB,
Sound = -10 dB, Chroma = -16 dB)		 IMD3 — — -45 dBc