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2N6202
2N6202 - Silicon Bipolar NPN Microwave Power Transistor 3 W, in the 100 - 400 MHz Range
The silicon bipolar n-p-n transistor is designed for communications transceiver equipment, auto-oscillator and frequency multiplier circuits, common emitter.
Features (At 400 MHz):
- Output Power: 3 W
- Power Gain: 8 dB Min
- Efficiency: 50% Min
Absolute Maximum Ratings
| Parameters | Sym | Value | Unit |
|---|---|---|---|
| Collector–Emitter Voltage | VCEO | 33 | VDC |
| Collector–Emitter Voltage | VCER | 60 | VDC |
| Collector-Base Voltage | VCBO | 60 | VDC |
| Emitter–Base Voltage | VEBO | 4 | VDC |
| Collector Current | IC | 0.5 | ADC |
| Operation Junction Temperature | Tj | -65 ÷ +200 | ºС |
| Storage Temperature Range | TSTG | -65 ÷ +150 | ºC |
| Thermal Resistance, Junction to Case | RqJC | 17.5 | °C/W |
| Total Power Dissipation, TC=25ºC | PD | 7.5 | W |
Parameters
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Collector–Emitter Breakdown Voltage (IC = 200 mA, IB =0 A) | V(BR)CEO | 33 | — | — | VDC |
| Collector–Base Breakdown Voltage (IC = 0.5 mA, VBE =0 V) | V(BR)CBO | 60 | — | — | VDC |
| Emitter–Base Breakdown Voltage (IE = 2.5 mA, IC = 0 A) | V(BR)EBO | 4 | — | — | VDC |
| DC Current Gain (VCE = 5 V, IC = 0.25 A) | hFE | 5 | — | 100 | |
| Power Gain (VCC = 28 V, POUT = 3 W, f = 400 MHz) | Gp | 8 | — | — | dB |
| Drain Efficiency (VCC = 28 V, POUT = 3 W, f = 400 MHz) | hC | 50 | 60 | 80 | % |
- Электронные компоненты
- Продукция для автомобильной и промышленной электроники
- Экспортная продукция
- Продукция компании Gallium Semiconductor