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2N6202 - Silicon Bipolar NPN Microwave Power Transistor 3 W, in the 100 - 400 MHz Range

2N6202 - Silicon Bipolar NPN Microwave Power Transistor 3 W, in the 100 - 400 MHz Range

The silicon bipolar n-p-n transistor is designed for communications transceiver equipment, auto-oscillator and frequency multiplier circuits, common emitter.

Features (At 400 MHz):

  • Output Power: 3 W
  • Power Gain: 8 dB Min
  • Efficiency: 50% Min
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Absolute Maximum Ratings

ParametersSymValueUnit
Collector–Emitter Voltage VCEO 33 VDC
Collector–Emitter Voltage VCER 60 VDC
Collector-Base Voltage VCBO 60 VDC
Emitter–Base Voltage VEBO 4 VDC
Collector Current IC 0.5 ADC
Operation Junction Temperature Tj -65 ÷ +200 ºС
Storage Temperature Range TSTG -65 ÷ +150 ºC
Thermal Resistance, Junction to Case RqJC 17.5 °C/W
Total Power Dissipation, TC=25ºC PD 7.5 W

Parameters

ParameterSymbolMin.Typ.Max.Unit
Collector–Emitter Breakdown Voltage (IC = 200 mA, IB =0 A) V(BR)CEO 33 VDC
Collector–Base Breakdown Voltage (IC = 0.5 mA, VBE =0 V) V(BR)CBO 60 VDC
Emitter–Base Breakdown Voltage (IE = 2.5 mA, IC = 0 A) V(BR)EBO 4 VDC
DC Current Gain (VCE = 5 V, IC = 0.25 A) hFE 5 100  
Power Gain (VCC = 28 V, POUT = 3 W, f = 400 MHz) Gp 8 dB
Drain Efficiency  (VCC = 28 V, POUT = 3 W, f = 400 MHz) hC 50 60 80 %