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MRF173 - Silicon MOS N-Channel Microwave Power Transistor 80 W, up to 200 MHz, Enhancement Mode

MRF173 - Silicon MOS N-Channel Microwave Power Transistor 80 W, up to 200 MHz, Enhancement Mode

The silicon MOS transistor designed for broadband commercial and military applications at frequencies up to 200 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

Features (at 150 MHz):

  • Power Gain: 11 dB Min
  • Output Power: 80 W
  • Efficiency: 55 % Min
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Absolute Maximum Ratings

ParametersSymValueUnit
Drain-Source Voltage VDSS 65 VDC
Drain Current-Continuous ID 9 ADC
Gate-Source Voltage VGS ±40 VDC
Operation Junction Temperature Tj -65 ÷ +200 ºС
Storage Temperature Range TSTG -65 ÷ +150 ºC
Thermal Resistance, Junction to Case RqJC 0.8 °C/W
Total Power Dissipation PD 220 W

Parameters

ParameterSymbolMin.Typ.Max.Unit
Drain-Source Breakdown Voltage (IDS=50 mA, VGS=0 V) V(BR)DSS 65 VDC
Gate-Source Leakage Current (VGS=40 V, VDS=0 V) IGSS 1 mADC
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS=0 V) IDSS 2 mADC
Gate Threshold Voltage (VDS = 10 V, ID = 50 mA) VGS(TH) 1 3 6 VDC
Forward Transconductance (VDS = 10 V, ID = 2 A) GFS 1.8 2.2 mhos
Input Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) CISS 110 pF
Output Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) COSS 105 pF
Reverse Transfer Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) CRSS 10 pF
Power Gain (VDS = 28 V, POUT = 80 W, lDQ = 50 mA, f = 150 MHz) Gp 11 13 dB
Drain Efficiency (VDS = 28 V, POUT = 80 W, lDQ = 50 mA, f = 150 MHz) hD 55 60 %