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MRF151 - Silicon MOS N-Channel RF Power Transistor 150 W, up to 175 MHz, Enhancement Mode

MRF151 - Silicon MOS N-Channel RF Power Transistor 150 W, up to 175 MHz, Enhancement Mode

The silicon MOS transistor is designed for professional transmitter applications in the HF frequency range.

Guaranteed Performance at 30 MHz, 50 V:

  • Power Gain: 22 dB Typ
  • Output Power: 150 W
  • Efficiency: 40 % Typ

Guaranteed Performance at 175 MHz, 50 V:

  • Power Gain: 13 dB Typ
  • Output Power: 150 W
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Absolute Maximum Ratings

ParametersSymValueUnit
Drain-Source Voltage VDSS 125 VDC
Drain Current-Continuous ID 16 ADC
Gate-Source Voltage VGS ±40 VDC
Storage Temperature Range TSTG -65 tu +150 ºC
Thermal Resistance, Junction to Case RqJC 0.6 ºC/W
Total Power Dissipation @TC=25 oC PD 300 W

Parameters

ParameterSymbolMin.Typ.Max.Unit
Drain-Source Breakdown Voltage (ID=100.0 mA, VGS=0 V) V(BR)DSS 125 — — VDC
Gate-Source Leakage Current (VGS=20 V, VDS=0 V) IGSS — — 1.0 mADC
Zero Gate Voltage Drain Leakage Current (VDS = 50 V, VGS=0 V) IDSS — — 5.0 mADC
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(TH) 1.0 — 5.0 VDC
Forward Transconductance (VDS = 10 V, ID = 5.0 A) GFS 5.0 7.0 — mhos
Input Capacitance (VDS = 50 V, VGS=0 V, f = 1 MHz) CISS — 350 — pF
Output Capacitance (VDS = 50 V, VGS=0 V, f = 1 MHz) COSS — 220 — pF
Reverse Transfer Capacitance (VDS = 50 V, VGS=0 V, f = 1 MHz) CRSS — 15 — pF
Power Gain (f1 = 30 MHz, f2 = 30.001 MHz, VDD = 50 V, POUT =150 W (PEP), lDQ. = 250 mA)
F=175 MHz		 Gp  
18		   22
13		 — dB
Drain Efficiency (f1 = 30 MHz, f2 = 30.001 MHz, VDD = 50 V, POUT = 150 W(PEP),  lDQ. = 250 mA ) hD   45 — %
Intermodulation Distortion (VDD = 50 V, Pout = 150 W (PEP),
f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 250 mA)		 IMD – -32 – dB