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MRF148A - Silicon MOS N-Channel RF Power Transistor 30 W, up to 30 MHz, Enhancement Mode

MRF148A - Silicon MOS N-Channel RF Power Transistor 30 W, up to 30 MHz, Enhancement Mode

The silicon MOS transistor is designed for professional transmitter applications in the VHF frequency range.

Features:

  • Guaranteed Performance at 30 MHz, 50 V
  • Power Gain: 18 dB Min
  • Output Power: 30 W
  • Efficiency: 40 % Min
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Absolute Maximum Ratings

ParametersSymValueUnit
Drain-Source Voltage VDSS 125 VDC
Drain Current-Continuous ID 6 ADC
Gate-Source Voltage VGS ±40 VDC
Storage Temperature Range TSTG -65 tu +150 ºC
Thermal Resistance, Junction to Case RqJC 1.52 ºC/W
Total Power Dissipation @TC=25 oC PD 115 W

Parameters

ParameterSymbolMin.Typ.Max.Unit
Drain-Source Breakdown Voltage (ID=10 mA, VGS=0 V) V(BR)DSS 125 — — VDC
Gate-Source Leakage Current (VGS=20 V, VDS=0 V) IGSS — — 1.0 mADC
Zero Gate Voltage Drain Leakage Current (VDS = 50 V, VGS=0 V) IDSS — — 1.0 mADC
Gate Threshold Voltage (VDS = 10 V, ID = 10 mA) VGS(TH) 1.0 — 5.0 VDC
Forward Transconductance (VDS = 10 V, ID = 2.5 A) GFS 0.8 1.2 — mhos
Input Capacitance (VDS = 50 V, VGS=0 V, f = 1 MHz) CISS — 62 — pF
Output Capacitance (VDS = 50 V, VGS=0 V, f = 1 MHz) COSS — 35 — pF
Reverse Transfer Capacitance (VDS = 50 V, VGS=0 V, f = 1 MHz) CRSS — 3.0 — pF
Power Gain                                                                            (30 MHz)
(VDD = 50 V, Pout = 30 W (PEP), IDQ = 100 mA)                (175 MHz)		 Gp –
–		 18
15		 –
–		 dB
Drain Efficiency                                                                     (30 W PEP)
(VDD = 50 V, f = 30 MHz, IDQ = 100 mA)                            (30 W CW)		 hD –
–		 40
50		 –
–		 %
Intermodulation Distortion (VDD = 50 V, Pout = 30 W (PEP),
f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 100 mA)		 IMD – -35 – dB