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TPV5051 - Silicon NPN Microwave Power Transistor 50 W, in the 470 - 860 MHz Range

TPV5051 - Silicon NPN Microwave Power Transistor 50 W, in the 470 - 860 MHz Range

The silicon n-p-n transistor is designed for AB Push Pull, Common Emitter from 470 to 860 MHz Applications.

Features:

  • Power Gain: 6.5 dB Min
  • Output Power: 50 W
  • Efficiency: 45 % Min
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Absolute Maximum Ratings

ParametersSymValueUnit
Collector–Emitter Voltage VCEO 30 VDC
Collector-Base Voltage VCBO 45 VDC
Collector Current IC 9 ADC
Operation Junction Temperature Tj -65 ÷ +200 ºС
Storage Temperature Range TSTG -65 ÷ +150 ºC
Thermal Resistance, Junction to Case RqJC 1.8 °C/W
Total Power Dissipation, TC = 25ºC PD 97 W

Parameters

ParameterSymbolMin.Typ.Max.Unit
Collector–Emitter Breakdown Voltage (IC = 60 mA, VBE =0 V) V(BR)CEO 30 — — VDC
Collector–Base Breakdown Voltage (IC = 20 mA) V(BR)CBO 45 — — VDC
Emitter–Base Breakdown Voltage (IE = 6 mA, IC = 0 A) V(BR)EBO 4 — — VDC
Collector– Emitter Leakage Current (VCE = 28 V) ICEO — — 10 mA
DC Current Gain (VCE = 20 V, IC = 800 mA) hFE 10 — 100  
Output Capacitance (VCB = 28 V, IE = 0 A, f = 1 MHz) COB — — 40 pF
Power Gain (VCE = 28 V, IC = 2x50 mA, f = 860 MHz, POUT = 50 W) Gp 6.5 — — dB
Drain Efficiency (VCE = 28 V, IC = 2x50 mA, f = 860 MHz, POUT = 50 W) hC 45 — — %