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TPV394 - Silicon NPN Microwave Power Transistor 5 W, up to 225 MHz

TPV394 - Silicon NPN Microwave Power Transistor 5 W, up to 225 MHz

The silicon n-p-n transistor is designed for Class A High Linearity Amplifier Applications in TV Band II-III Transmitters.

Features:

  • Power Gain: 14 dB Min
  • Output Power: 5 W
  • IMD3: -60 dBc Max
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Absolute Maximum Ratings

ParametersSymValueUnit
Collector–Emitter Voltage VCEO 28 VDC
Collector–Emitter Voltage VCER 45 VDC
Collector Current IC 4 ADC
Operation Junction Temperature Tj -55 ÷ +200 ºС
Storage Temperature Range TSTG -55 ÷ +150 ºC
Thermal Resistance, Junction to Case RqJC 3.5 °C/W
Total Power Dissipation, TC = 25ºC PD 50 W

Parameters

ParameterSymbolMin.Typ.Max.Unit
Collector–Emitter Breakdown Voltage (IC = 40 mA, VBE =0 V) V(BR)CEO 28 — — VDC
Collector–Emitter Breakdown Voltage (IC = 10 mA, RBE = 10 Ω) V(BR)CER 45 — — VDC
Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0 A) V(BR)EBO 4 — — VDC
Collector–Base Leakage Current (VCB = 20 V) ICBO — — 3 mA
DC Current Gain (VCE = 5 V, IC = 1000 mA) hFE 10 — 100  
Output Capacitance (VCB = 28 V, IE = 0 A, f = 1 MHz) COB — 34 — pF
Power Gain (VCE = 28 V, IC = 1000 mA, f = 225 MHz, POUT = 5 W) Gp 14 — — dB
Two-Tone Third-Order Intermodulation Distortion
(VCE = 28 V, IC = 1000 mA, f = 225 MHz, POUT = 5 W)		 IMD3 — — -60 dBc