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KT9150A - NPN Silicon RF Power Transistor

KT9150A - NPN Silicon RF Power Transistor

Designed for operation in ultra - linear Class A low and medium-power amplifiers of TV transmitters (Band IV – V).

Features:

  • Output power = 8 W (PEP), f = 860 MHz, VCC= 25 V
  • Power gain = 8 dB (min)
  • 3 Tone IMD = -58 dB (max)
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Maximum Ratings

RatingSymbolValueUnit
Collector-Emitter Voltage VCER 40 V
Emitter-Base Voltage VEBO 4 V
Collector Current IC 5 A
Operating Junction Temperature Tj +200 oC
Storage Temperature Range Tstg -65 to +150 oC
Thermal Resistance (junction to case) RθJC 2.5 oC/W
Total Power Dissipation, TC=25 ºC PD 70 W

Functional Tests

CharacteristicsSymbolValueUnit
mintypmax
Common-Emitter Amplifier Power Gain
(Vcc = 25 V, Pout = 8 W PEP, f = 860 MHz)		 GP 8     dB
Intermodulation Distortion(2)
(Vcc = 25 V, Pout = 8 W PEP, f = 860 MHz)		 3 Tone
IMD		     -58 dB