Русский English
Главная → Продукты → Экспортная продукция → Мощные биполярные СВЧ транзисторы → СВЧ транзисторы → 2SC3812

2SC3812 - NPN RF Power Transistor

2SC3812 - NPN RF Power Transistor

The silicon n-p-n transistor is designed for Class AB Linearity Amplifier Applications in TV Band II-III Transmitters.

Features:

  • Power Gain: 7 dB
  • Output Power: 200 W
  • Efficiency 50% (min)
Скачать техническое описание
Отправить запрос
Отправить запрос

Absolute Maximum Ratings

ParametersSymValueUnit
Collector-Emitter Voltage VCEO 32 VDC
Collector-Base Voltage VCBO 55 VDC
Collector Current IC 48 ADC
Operation Junction Temperature Tj +200 ºС
Storage Temperature Range TSTG -55 ÷ +150 ºC
Thermal Resistance, Junction to Case RθJC 0.3 °C/W
Total Power Dissipation, TC = 25ºC PD 580 W

Parameters

ParameterSymbolMin.Typ.Max.Unit
Collector–Emitter Breakdown Voltage (IC = 200 mA, VBE =0 V) V(BR)CEO 32 — — VDC
Collector–Base Breakdown Voltage (IC = 50 mA) V(BR)CBO 55 — — VDC
Emitter–Base Breakdown Voltage (IE = 10 mA, IC = 0 A) V(BR)EBO 4 — — VDC
Collector–Base Leakage Current (VCB = 55 V) ICBO — — 10 mA
DC Current Gain (VCE = 5 V, IC = 3 A) hFE 30 — 100  
Output Capacitance (VCB = 28 V, IE = 0 A, f = 1 MHz) COB — 300 500 pF
Output Power (VCE = 28 V, IC = 2x0.5 A, f = 230 MHz, PIN = 45 W) POUT 158 200 — W
Power Gain (VCE = 28 V, IC = 2x0.5 A, f = 230 MHz) Gp 7 8 — dB
Collector Efficiency(VCE = 28 V, IC = 2x0.5 A, f = 230 MHz, POUT=200W) η 50 60   %