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BLF278 - Silicon MOS N-Channel Microwave Power Transistor 250 W, up to 225 MHz, Enhancement Mode

BLF278 - Silicon MOS N-Channel Microwave Power Transistor 250 W, up to 225 MHz, Enhancement Mode

The silicon MOS push pull transistor designed for 225 MHz, 250 W Transmitter and Amplifier Applications.

Features:

  • Power Gain: 14 dB Min
  • Output Power: 250 W
  • Efficiency: 50 % Min
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Absolute Maximum Ratings

ParametersSymValueUnit
Drain-Source Voltage VDSS 125 VDC
Drain Current-Continuous ID 40 ADC
Gate-source Voltage VGS ±40 VDC
Operation Junction Temperature Tj -65 ÷ +200 ºС
Storage Temperature Range TSTG -65 ÷ +150 ºC
Thermal Resistance, Junction to Case RqJC 0.35 °C/W
Total Power Dissipation PD 500 W

Parameters

ParameterSymbolMin.Typ.Max.Unit
Drain-Source Breakdown Voltage (IDS=100 mA, VGS=0 V) V(BR)DSS 125 VDC
Gate-Source Leakage Current (VGS=20 V, VDS=0 V) IGSS 1 mADC
Zero Gate Voltage Drain Leakage Current (VDS = 50 V, VGS=0 V) IDSS 5 mADC
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(TH) 1 5 VDC
Forward Transconductance (VDS = 10 V, ID = 5 A) GFS 5 mhos
Input Capacitance (VDS = 50 V, VGS=0 V, f = 1 MHz) CISS 350 pF
Output Capacitance (VDS = 50 V, VGS=0 V, f = 1 MHz) COSS 250 pF
Reverse Transfer Capacitance (VDS = 50 V, VGS=0 V, f = 1 MHz) CRSS 15 pF
Power Gain (VDS = 50 V, POUT = 250 W, lDQ = 2x0.5 A,  f = 225 MHz) Gp 14 16 dB
Drain Efficiency (VDS = 50 V, POUT = 250 W, lDQ = 2x0.5 A, f = 225 MHz) hD 50 55 %