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TPV595 - Silicon NPN Microwave Power Transistor 14 W, in the 470 - 860 MHz Range

TPV595 - Silicon NPN Microwave Power Transistor 14 W, in the 470 - 860 MHz Range

The silicon n-p-n transistor is designed for Class AB Push Pull, Common Emitter from 470 to 860 MHz Applications.

Features:

  • Power Gain: 8.5 dB Min
  • Output Power: 14 W
  • IMD3: -47 dB Max
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Absolute Maximum Ratings

ParametersSymValueUnit
Collector–Emitter Voltage VCEO 25 VDC
Collector–Base Voltage VCBO 45 VDC
Collector Current IC 2x2.6 ADC
Operation Junction Temperature Tj -50 ÷ +200 ºС
Storage Temperature Range TSTG -50 ÷ +150 ºC
Thermal Resistance, Junction to Case RqJC 2.5 °C/W
Total Power Dissipation, TC = 25ºC PD 65 W

Parameters

ParameterSymbolMin.Typ.Max.Unit
Collector–Emitter Breakdown Voltage (IC = 40 mA, VBE =0 V) V(BR)CEO 25 — — VDC
Collector –Base Breakdown Voltage (IC = 20 mA, IC = 0 A) V(BR)CBO 45 — — VDC
Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0) V(BR)EBO 3 — — VDC
Collector–Base Leakage Current (VCB = 20 V) ICBO — — 5 mA
DC Current Gain (VCE = 20 V, IC = 500 mA) hFE 10 — 100  
Output Capacitance (VCB = 25 V, IE = 0 A, f = 1 MHz) COB — — 20 pF
Power Gain (VCE = 25 V, IC = 2x900 mA, f = 860 MHz, POUT = 14 W) Gp 8.5 — — dB
Two-Tone Third-Order Intermodulation Distortion
(VCE = 25 V, IC = 2x900 mA, f = 860 MHz, POUT = 14 W,
Vision = -8 dB, Sound = -7 dB, SB = -16 dB)		 IMD3 — — -47 dB