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2N5590 - Silicon Bipolar NPN Microwave Power Transistor 10 W, in the 130 - 175 MHz Range

2N5590 - Silicon Bipolar NPN Microwave Power Transistor 10 W, in the 130 - 175 MHz Range

The silicon bipolar n-p-n transistor designed primarily for VHF mobile and marine transmitters.

Features (At 175 MHz):

  • Output Power: 10 W
  • Power Gain: 5.2 dB Min
  • Efficiency: 50% Min
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Absolute Maximum Ratings

ParametersSymValueUnit
Collector–Emitter Voltage VCEO 18 VDC
Collector-Base Voltage VCBO 36 VDC
Emitter–Base Voltage VEBO 4 VDC
Collector Current IC 2 ADC
Operation Junction Temperature Tj -65 ÷ +200 ºС
Storage Temperature Range TSTG -65 ÷ +150 ºC
Thermal Resistance, Junction to Case RθJC 5.8 °C/W
Total Power Dissipation, TC=25ºC PD 30 W

Parameters

ParameterSymbolMin.Typ.Max.Unit
Collector–Emitter Breakdown Voltage (IC = 200 mA, IB = 0 A) V(BR)CEO 18 VDC
Collector–Emitter Breakdown Voltage (IC = 200 mA, VBE =0 V) V(BR)CER 36 VDC
Emitter–Base Breakdown Voltage (IE = 2.5 mA, IC = 0 A) V(BR)EBO 4 VDC
Collector–Base Leakage Current (VCB = 15 V, IE = 0 A) ICBO 1 mADC
DC Current Gain (VCE = 5 V, IC = 0.25 A) hFE 5 100  
Output Capacitance (VCB = 15 V, IC = 0 A, f = 1 MHz) COB 70 pF
Power Gain (VCB = 13.6 V, POUT = 10 W, f = 175 MHz) Gp 5.2 dB
Drain Efficiency  (VCB = 13.6 V, POUT = 10 W, f = 175 MHz) hC 50 %