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BLF245
BLF245 - Silicon MOS N-Channel Microwave Power Transistor 30 W, up to 175 MHz, Enhancement Mode
The silicon MOS transistor designed for large signal amplifier applications in the VHF frequency range.
Features:
- Power Gain: 13 dB Min
- Output Power: 30 W
- Efficiency: 50 % Min
Absolute Maximum Ratings
Parameters | Sym | Value | Unit |
---|---|---|---|
Drain-Source Voltage | VDSS | 65 | VDC |
Drain Current-Continuous | ID | 6 | ADC |
Gate-Source Voltage | VGS | ±20 | VDC |
Operation Junction Temperature | Tj | -65 ÷ +200 | ºС |
Storage Temperature Range | TSTG | -65 ÷ +150 | ºC |
Thermal Resistance, Junction to Case |
RqJC | 2.6 | ºC /W |
Total Power Dissipation | PD | 68 | W |
Parameters
Parameter | Symbol | Min. | Typ. | Max. | Unit |
---|---|---|---|---|---|
Drain-Source Breakdown Voltage (IDS=10 mA, VGS=0 V) | V(BR)DSS | 65 | — | — | VDC |
Gate-Source Leakage Current (VGS=20 V, VDS=0 V) | IGSS | — | — | 1 | mADC |
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS=0 V) | IDSS | — | — | 2 | mADC |
Gate Threshold Voltage (VDS = 10 V, ID = 10 mA) | VGS(TH) | 2 | — | 4.5 | VDC |
Forward Transconductance (VDS = 10 V, ID = 1.5 A) | GFS | 1.2 | 1.9 | — | mhos |
Input Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) | CISS | — | 125 | — | pF |
Output Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) | COSS | — | 75 | — | pF |
Reverse Transfer Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) | CRSS | — | 7 | — | pF |
Power Gain (VDS = 28 V, POUT = 30 W, lDQ = 50 mA, f = 175 MHz) | Gp | 13 | 15.5 | — | dB |
Drain Efficiency (VDS = 28 V, POUT = 30 W, lDQ = 50 mA, f = 175 MHz) | hD | 50 | 67 | — | % |